The appraisal will be organized by the Chinese Institute of Electronics, Xi'an University of Electronic Science and Technology Academician Hao Yue served as appraisal director, China IGBT Technology Innovation and Industry Alliance, CLP Group 55, University of Electronic Science and Technology, Peking University, Global Energy Internet Research Institute of Electrical Engineering, Chinese Academy of Sciences and CAS Institute of Physics and other units as appraisal committee members. The appraisal committee earnestly listened to the research and development report, technical report, user use report and economic and social benefit analysis report of the project completion unit about the achievement, and reviewed the relevant technical materials such as new search report, test report and data review report.
The project "High performance SiC SBD, MOSFET Power Electronics Product Development and Application Verification" enabled the realization of high performance SiC SBD 650V / 150A, 1200V / 100A, 1700V / 50A, 3300V / 32A and 5000V / 3A five representative varieties and SiC MOSFET 600V / 5A, 1200V / 20A and 1700V / 5A three representative varieties, some products have been used in photovoltaic inverter, rail transit, electric vehicles and other fields.
After questioning and discussing, the appraisal committee considered that the project made a breakthrough in the structural design, key manufacturing process and interface state control of high-power SiC devices. The performance of the devices reached the advanced level in China and the international advanced level. The achievements have been implemented in the subway vehicle traction system running 6,000 km , 19.5MWh of photovoltaic field hang-up power generation and 9,469 km of hybrid city bus have good social and economic benefits. Accreditation Committee unanimously agreed that the project results through the identification of scientific and technological achievements.